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Carrier Profiling of a Heterojunction Bipolar Transistor And P-i-n Photodiode Structures by Electrochemical C-v Technique

TitleCarrier Profiling of a Heterojunction Bipolar Transistor And P-i-n Photodiode Structures by Electrochemical C-v Technique
Publication TypeJournal Article
Year of Publication1999
AuthorsR, K., Á. Nemcsics, H. R, R. F, and P. B
JournalPHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Volume175
Issue2
Pagination631 - 636
Date Published1999
Publication Languageeng
Abstract

Carrier profiling of GaAs/GaAlAs multilayer structures (heterojunction bipolar transistor and heterojunction p-i-n photodiode) by electrochemical capacitance-voltage technique is described. Optimum measurement parameters (electrolyte type, etching and measurement voltages, etc.) are established. The results are compared with those of spreading resistance profiling and transmission electron microscopy. Some specific problems are discussed.