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Formation of Ge nanocrystals in SiO2 by electron beam evaporation

Title	Formation of Ge nanocrystals in SiO2 by electron beam evaporation
Publication Type	Journal Article
Year of Publication	2008
Authors	P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth
Journal	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume	8
Issue	2
Pagination	818 - 822
Date Published	2008
Publication Language	eng
Abstract	Ge nanocrystals were formed by electron beam evaporation on SiO2covered Si substrates. The size and distribution of the nanocrystals were studied by atomic force microscopy, scanning electron microscopy and cross-sectional transmission electron microscopy. Dependencies of the nanocrystal size, of the nanocrystal surface coverage, and sheet resistance obtained by van der Pauw method of the Ge layer have been found on the evaporation time. The suggested growth mechanism for the formation of nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.