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Interpretation of the depth-dependent etch-pit density in InGaAs/GaAs heterostructures

Title	Interpretation of the depth-dependent etch-pit density in InGaAs/GaAs heterostructures
Publication Type	Journal Article
Year of Publication	2003
Authors	Nemcsics, Á., and R. F
Journal	PHYSICA STATUS SOLIDI C-CONFERENCES AND CRITICAL REVIEWS
Issue	3
Pagination	893 - 896
Date Published	2003
Publication Language	eng
Abstract	We study the defect structure of MBE-grown (100) InGaAs/GaAsmismatched heteroepitaxial layers by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the etch pit density. The defect density is inversely proportional to the layer thickness and increases with In content. The results are explained by a quantitative theoretical model of threading dislocation annihilation. The importance of the layer residual strain in the annihilation process is shown.