An x-ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

Structural properties of highly mismatched InGaAs/GaAs (100)heterostructures grown by molecular beam epitaxy are studied
using high-resolution X-ray diffraction. The layers are nearly
fully relaxed and show closely tetragonal distortion as shown
by asymmetric reflections. However, structural defects show an
asymmetry of the orthogonal <110> directions as revealed by
reciprocal space maps. Substrate miscut effects are accounted
for this difference.