The experimental band structure of In_xGa_1-xAs(001)

In_xGa_1-xAs layers for photoemission spectroscopy were grown on GaAs(001) substrates by molecular beam epitaxy. The structure and quality of the surface and the layer thickness were observeded in situ by dynamical reflection high-energy electron diffraction oscillations. Angle-resolved photoemission spectroscopy studies using He-I radiation were performed on the epitaxial layers. The energy-distribution curves of the photoelectrons were determined along the three different high symmetric directions in the surface Brillouin zone. The experimental band structure of In_xGa_1-xAs was determined with the help of the experimental and theoretical electronic structure of GaAs and InAs materials.