Publications

Basa, P., G. Molnar, L. Dobos, B. Pecz, L. Toth, A. L. Toth, A. A. Koos, L. Dozsa, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, pp. 818 - 822, Submitted.

Horváth, Z. J., and P. Basa, "Nanocrystal memory structures", Nanocrystals and Quantum Dots of Group IV Semiconductors, Stevenson Ranch, American Scientific Publishers, pp. 225-251, 2010.

P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8, issue 2, ANDERSON JC, 1970, ADV PHYS, V19, P311CAMPBELL DS, 1971, REP PROG PHYS, V34, P283 CHOI WK, 2005, P 1 INT WORKSH SEM N, V1, P171 DANA A, 2006, ARXIVCONDMAT0605168 DUGUAY S, 2005, J APPL PHYS 1, V97, ARTN 104330 EAGLESHAM DJ, 1943, PHYS REV LETT, V64, P1990, pp. 818 - 822, 2008. Abstract

Nemcsics, Á., H. E, N. S, M. LM, M. I, and Z. J. Horváth, "Some remarks to the nanowires grown on III-V substrate", ASDAM 2008, CONFERENCE PROCEEDINGS, New York, IEEE, New York, pp. P24-1 - , 2008.

Orlov, L. K., Z. J. Horváth, M. L. Orlov, A. T. Lonchakov, N. L. Ivina, and L. Dobos, "Anomalous electrical properties of Si/Si1–xGex heterostructures with an electron transport channel in Si layers", Fizika Tverdogo Tela, vol. 50, issue 2, pp. 317–327, 2008.

Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.

Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.

Kovalev, A. I., D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y. Lifshitz, A. Berman, P. Basa, and Z. J. Horváth, "Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies", Int. J. Nanoparticles, vol. 1, pp. 14-31, 2008.

Horváth, Z. J., "Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currents", Appl. Surf. Sci., vol. 255, pp. 743-745, 2008.

Shandalov, M., J. P. Makai, J. Balazs, Z. J. Horváth, N. Gutman, A. Sa'ar, and Y. Golan, "Optical properties of size quantized PbSe films chemically deposited on GaAs", Eur. Phys. J. Appl. Phys., vol. 41, pp. 75-80, 2008.

P, B., M. G, K. AA, D. L, Á. Nemcsics, Z. J. Horváth, G. PM, M. VP, B. SV, F. VM, et al., "FORMATION OF Ge NANOCRYSTALS BY ELECTRON BEAM EVAPORATION", NANOMEETING 2007 International Conference, pp. 431 - 434, 2007.

Borkovskaya, Y. O., N. L. Dmitruk, Z. J. Horváth, I. B. Mamontova, and A. V. Sukach, "Diffused p-n GaAs junctions with nano/microrelief active interface", Phys. Stat. Sol. (C), vol. 4, issue 4, pp. 1523–1526, 2007.

Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, and P. Szöllösi, "Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals", Physica E, vol. 38, pp. 71–75, 2007.

Rakovics, V., Z. J. Horváth, Z. E. Horváth, I. Bársony, C. Frigeri, and T. Besagni, "Investigation of CdS/InP heterojunction prepared by chemical bath deposition", Phys. Stat. Sol. (C), vol. 4, issue 4, pp. 1490–1493, 2007.

Basa, P., Z. J. Horváth, T. Jászi, G. Molnár, A. E. Pap, L. Dobos, L. Tóth, and B. Pécz, "Nem-illékony nanokristályos félvezető memóriák", Híradástechnika, vol. LXII., issue 10, pp. 43-46, 2007.

Bársony, I., and Z. J. Horváth, "Versenyképes tudomány - 50 éves az MTA Műszaki Fizikai és Anyagtudományi Kutatóintézet", Híradástechnika, vol. LXII., issue 10, pp. 1, 2007.

Wainstein, D. L., A. I. Kovalev, C. Ducso, T. Jaszi, P. Basa, Z. J. Horváth, T. Lohner, and P. Petrik, "X-ray photoelectron spectroscopy investigations of Si in non-stoichiometric SiNx LPCVD multilayered coatings", Physica E, vol. 38, pp. 156–159, 2007.

P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", International Workshop on Nanostructured Materials (ANAOMAT 2006), pp. 818 - 822, 2006.

Szöllősi, P., P. Basa, C. Dücső, B. Máté, M. Ádám, T. Lohner, P. Petrik, B. Pécz, L. Tóth, L. Dobos, et al., "Electrical and optical properties of Si-rich SiNx layers: Effect of annealing", Current Appl. Phys., vol. 6, issue 2, pp. 179-181, 2006.

Horváth, Z. J., "Electrical pecularities in GaAs and Si based low dimensional structures", Current Appl. Phys., vol. 6, issue 2, pp. 205-211, 2006.

Dobos, L., B. Pécz, L. Tóth, Z. J. Horváth, Z. E. Horváth, A. Tóth, E. Horváth, B. Beaumont, and Z. Bougrioua, "Metal contacts to n-GaN", Appl. Surf. Sci., vol. 253, pp. 655-661, 2006.

Horváth, Z. J., "Operation and preparation of non-volatile memory elements with semiconductor nanocrystals", Kando Conference 2006, Budapest, pp. 1, 2006.

Horváth, Z. J., "Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon based MIS devices", Current Appl. Phys., vol. 6, issue 2, pp. 145-148, 2006.

Horváth, Z. J., L. Dózsa, V. V. Tuyen, B. Põdör, Á. Nemcsics, P. Frigeri, E. Gombia, R. Mosca, and S. Franchi, "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures", THIN SOLID FILMS, vol. 367, pp. 89 - 92, 2000.

M, S., Á. Nemcsics, B. J, Z. Z, K. N, and Z. J. Horváth, "Sputtered a- SiGe:H layers for solar cell purposes", SSSI-II Book of extended abstracts, pp. 65 - , 2000.