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Found 30 results

Filters: Author is Horváth, Zsolt József  [Clear All Filters]
1999
Horváth, Z. J., D. L, V. T. V, P. B, Á. Nemcsics, F. P, G. E, M. R, and F. S, "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures", MBE-GPT 99, pp. 89 - 92, 1999.
1998
Horváth, Z. J., A. Subrahmanyan, P. Manivannan, N. Balasubramanian, Á. Nemcsics, J. Karányi, M. Rácz, and V. V. Tuyen, "Electrical and Photovoltaic Study of ITO/GaAs and ITO/InP Heterojunctions", Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, pp. 3711 - 3714, 1998.
1985
Horváth, Z. J., G. I, N. - S. M, T. P, N. A, D. L, K. B, Pál E. K, S. B, F. Á, et al., "The effect of dopant concentration on the electrical behaviour of GaAs-CrAu junctions", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 747 - 753, 1985.
Horváth, Z. J., I. Gyúró, M. Németh-Sallay, P. Tüttő, A. Nagy, T. Németh, G. Stubnya, and Á. Nemcsics, "The Effect of Dopant Concentration on the Electrical Behaviour of GaAs-CrAu Junctions", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 143 - , 1985.
1984
Horváth, Z. J., I. Gyúró, Á. Nemcsics, and K. Kazi, "GaAs Schottky Tuning Varactors", Conference on Physics and Technology of GaAs and other III-V Semiconductors, Berlin, Akademie der Wissenschaften der DDR, pp. 13 - , 1984.