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Submitted
Basa, P., G. Molnar, L. Dobos, B. Pecz, L. Toth, A. L. Toth, A. A. Koos, L. Dozsa, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, pp. 818 - 822, Submitted.
2011
Tóth, L., P. Basa, T. Jászi, L. Dobos, B. Pécz, and Z. J. Horváth, "Development of Si nanocrystal layers embedded in Si3N4", 10th Multinational Congress on Microscopy 2011, Urbino, Italy, pp. 559-560, 09/2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 19th Int. Symp. “Nanostructures: Physics and Technology”, Ekaterinburg, Russia, pp. 207-208, 06/2011.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, and P. Turmezei, "Charging behaviour of MNOS memory devices with embedded Si nanocrystals: Experiments and computer simulation", Int. Symp. Applied Informatics and Related Areas, Székesfehérvár, Hungary, 2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 18th Int. Symp. Nanostructures: Physics and Technology, Ekaterinburg, Russia, 2011.
2010
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", Solid State Surfaces and Interfaces SSSI 2010, 22-25 November, 2010, Smolenice, Slovakia, 11/2010.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", 7th Solid State Surfaces and Interfaces SSSI 2010, Extended Abstract Book, Smolenice, Slovakia, pp. 36-38, 2010.
Horváth, Z. J., and P. Basa, "Nanocrystal memory structures", Nanocrystals and Quantum Dots of Group IV Semiconductors, Stevenson Ranch, American Scientific Publishers, pp. 225-251, 2010.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. I. Kovalev, D. L. Wainstein, T. Gerlai, and P. Turmezei, "Silicon nitride based non-volatile memory structures with embedded Si or Ge nanocrystals", Communications, Scientific Letters of the University of Zilina, vol. 12, issue 2, pp. 19-22, 2010.
2009
Horváth, Z. J., and P. Basa, "Nanocrystal non-volatile memory devices", Mater. Sci. Forum, vol. 609, pp. 1-9, 2009.
Horváth, Z. J., and P. Basa, "New trends in non-volatile semiconductor memories", Towards Intelligent Engineering and Information Technology, vol. 243, Berlin Heidelberg, Springer, pp. 323–333, 2009.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, and P. Turmezei, "Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals", 32nd Int. Spring Seminar Electron. Technol., vol. 32, Brno, Czech Republic, 2009.
2008
Levichev, S., A. Chahboun, P. Basa, A. G. Rolo, N. P. Barradas, E. Alves, Z. J. Horvath, O. Conde, and M. J. M. Gomes, "Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering", Microelectron. Eng., vol. 85, pp. 2374-2377, 2008.
Basa, P., A. S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, and Z. J. Horváth, "Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals", Appl. Surf. Sci., vol. 254, pp. 3626-3629, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Kovalev, A. I., D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y. Lifshitz, A. Berman, P. Basa, and Z. J. Horváth, "Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies", Int. J. Nanoparticles, vol. 1, pp. 14-31, 2008.
Levichev, S., P. Basa, Z. J. Horváth, A. Chahboun, A. G. Rolo, N. P. Barradas, E. Alves, and M. J. M. Gomes, "Memory effect on CdSe nanocrystals embedded in SiO2 matrix", Solid State Commun., vol. 148, pp. 105–108, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, A. I. Kovalev, D. L. Wainstein, and L. Dózsa, "MNOS memory structures with embedded silicon nanocrystals", 16th Int. Symp. Nanostructures: Physics and Technology, Vladivostok, Russia, pp. 126-127, 2008.
Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, and P. Turmezei, "Si3N4 based non-volatile memory structures with embedded Si nanocrystals", 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, vol. 7, Smolenice, Slovakia, pp. 63-66, 2008.
2007
Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, and P. Szöllösi, "Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals", Physica E, vol. 38, pp. 71–75, 2007.
Basa, P., G. Molnár, A. A. Koós, L. Dózsa, Á. Nemcsics, Z. J. Horváth, P. M. Gorley, V. P. Makhniy, S. V. Bilichuk, V. M. Frasunyak, et al., "Formation of Ge nanocrystals by electron beam evaporation", Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of Nanostrucures, Minsk, Belarus, World Scientific, Singapore, pp. 431-434, 2007.
Horváth, Z. J., and P. Basa, "MIS structures with embedded semiconductor nanocrystals for non-volatile memory purposes", 13th Int. Conf. Applied Physics of Condensed Matter APCOM 2007, Bystrá, Slovakia, pp. 32-35, 2007.
Horváth, Z. J., P. Basa, T. Jászi, K. Nagy, A. E. Pap, T. Szabó, and P. Szöllősi, "MNOS and MNS memory structures with embedded Si nanocrystals", Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of Nanostrucures, Minsk, Belarus, World Scientific, Singapore, pp. 566-569, 2007.
Basa, P., Z. J. Horváth, T. Jászi, G. Molnár, A. E. Pap, L. Dobos, L. Tóth, and B. Pécz, "Nem-illékony nanokristályos félvezető memóriák", Híradástechnika, vol. LXII., issue 10, pp. 43-46, 2007.