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Publications

Found 2 results

Filters: Author is Károly Somogyi  [Clear All Filters]
2000
Nemcsics, Á., and K. Somogyi, "Correlation between Diffusion Length and Hall Mobility in Different GaAs Epitaxial Layers", Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems ASDAM 2000, pp. 265 - 268, 2000.
1988
Kovács, B., I. Mészáros, K. Somogyi, Á. Nemcsics, and C. Sass, "Material Characterization for GaAs MESFET purposes", 3rd Conference on Physics and Technology of GaAs and other III-V Semiconductors, pp. 47 - , 1988.