Studies on the RF sputtered amorphous SiGe thin films

In this study, rf sputtered hydrogenated amorphous silicon-germaniumthin films deposited at room temperature have been investigated by
spectroscopic ellipsometry and Rutherford backscattering. Technological
parameters were determined for good layer quality of amorphous
material. The layer thicknesses were first evaluated from the
Rutherford backscattering and spectroscopic ellipsometry measurements,
then measured directly by step-profiler, and compared to each other.
The inherence of technological parameters and composition of the layers
is discussed.