Study of polish material removal by electrochemical method on different compound semiconductors

The electrochemical layer removal is widely used in the processing ofsemiconductors. The surface remaining after the layer removal is
generally rough. Under certain conditions, this layer removal may be
selective and results in the development of dislocation while, under
other conditions, the selectivity decreases and the surface remains
smooth after the electrochemical etching. In our present work, we
compared the surface characteristics of GaAs and InP after
electrochemical layer removal using different electrolytes. The
investigation of the surface was carried out using scanning electron
microscopy and alpha -step profiling equipment. In order to compare the
surface roughness, we introduced a so-called roughness number. The
surface morphology was investigated from the point of view of pattern
formation.