Publications

Nemcsics, Á., T. L, D. L, H. C, S. A, S. A, W. H, and H. W, "Composition of the "GaAs" quantum dot, grown by droplet epitaxy", SUPERLATTICES AND MICROSTRUCTURES, vol. 48, issue 4, pp. 351 - 357, 2010.

Nemcsics, Á., S. M, D. L, and P. Turmezei, "Investigation of Electrochemically Etched GaAs(001) Surface with the Help of Image Processing", ACTA POLYTECHNICA HUNGARICA, vol. 6, issue 1, pp. 95 - 102, 2009.

P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8, issue 2, ANDERSON JC, 1970, ADV PHYS, V19, P311CAMPBELL DS, 1971, REP PROG PHYS, V34, P283 CHOI WK, 2005, P 1 INT WORKSH SEM N, V1, P171 DANA A, 2006, ARXIVCONDMAT0605168 DUGUAY S, 2005, J APPL PHYS 1, V97, ARTN 104330 EAGLESHAM DJ, 1943, PHYS REV LETT, V64, P1990, pp. 818 - 822, 2008. Abstract

Nemcsics, Á., S. M, D. L, and P. Turmezei, "Image processing in the material science or fractal behaviour on the GaAs/electrolyte interface", Proceedings of SISY 2008 - 6th Serbian-Hungarian Joint Symposium on Intelligent Systems, pp. 1 - 4, 2008.

P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", International Workshop on Nanostructured Materials (ANAOMAT 2006), pp. 818 - 822, 2006.

Nemcsics, Á., S. M, D. L, and B. G, "Morphological investigation of the electrochemically etched GaAs (001) surface", MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 90, pp. 67 - 71, 2002.

Nemcsics, Á., D. L, and R. F, "Electrochemical defect characterization of different compound semiconductor surfaces", FIZIKA ELEKTRONIKA, vol. 112, pp. 108 - 112, 2001. Abstract

Nemcsics, Á., D. L, and D. L, "Investigation of non-selective material removal by electrochemical method on different III-V semiconductors", ACTA TECHNICA CSAV, vol. 108, issue 46, Blood, P., (1986) Semicond. Sci. Technol., 1, pp. 7-27;Nemcsics, Á., (1999) Phys. stat. sol. (a), 173, pp. 405-415; Ambridge, T., Faktor, M.M., (1975) J. Appl. El. Chem., 5, pp. 319-328; Seidel, H.G., Voss, R., (1991) Micro System Technologies, pp. 291-, pp. 521 - 531, 2001. Abstract

Nemcsics, Á., D. L, and D. L, "Study of polish material removal by electrochemical method on different compound semiconductors", INORGANIC MATERIALS, vol. 36, issue 10, 1988, BIORAD PN4200 7ANUALAKITA K, 1991, J ELECTROCHEM SOC, V138, P2095 AMBRIDGE T, 1974, ELECTRON LETT, V15, P674 AMBRIDGE T, 1975, J APPL ELECTROCHEM, V5, P319 BLOOD P, 1985, SEMICOND SCI TECH, V1, P7 CHEN LC, 1996, GENET ENG NEWS, V16, P38 FAKTOR MM, 1, pp. 969 - 974, 2000. Abstract

Nemcsics, Á., R. F, and D. L, "Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systems", THIN SOLID FILMS, vol. 343-344, pp. 520 - 523, 1999. Abstract

Nemcsics, Á., and D. L, "Investigation of InxGaAs1-x/GaAs heterostructures by electrochemical method", NATO ASI Series, Heterostructure Epitaxy and Devices - HEAD '97: Kluwer Academic Publishers, pp. 135 - 138, 1998.

Nemcsics, Á., D. L, K. B, and M. I, "Pattern formation on the compound semiconductor surface after selective electrochemical etching", ASDAM 98, 2nd International Conference on Advanced Semiconductor Devices and Microsystems: Smolenice Castle, pp. 39 - 42, 1998.