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Studies on the RF sputtered amorphous SiGe thin films

Title	Studies on the RF sputtered amorphous SiGe thin films
Publication Type	Journal Article
Year of Publication	2006
Authors	M, S., L. T, Z. Z, P. P, Á. Nemcsics, K. NQ, and P. Turmezei
Journal	INORGANIC MATERIALS
Volume	42
Issue	1
Pagination	3 - 6
Date Published	2006
Publication Language	eng
Abstract	In this study, rf sputtered hydrogenated amorphous silicon-germaniumthin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.