Skip to main content
science.uni-obuda.hu logo
  • Címlap
  • Szerzők
  • Kulcsszavak
Home » Publications

Studies on the RF sputtered amorphous SiGe thin films

TitleStudies on the RF sputtered amorphous SiGe thin films
Publication TypeJournal Article
Year of Publication2006
AuthorsM, S., L. T, Z. Z, P. P, Á. Nemcsics, K. NQ, and P. Turmezei
JournalINORGANIC MATERIALS
Volume42
Issue1
Pagination3 - 6
Date Published2006
Publication Languageeng
Abstract

In this study, rf sputtered hydrogenated amorphous silicon-germaniumthin films deposited at room temperature have been investigated by
spectroscopic ellipsometry and Rutherford backscattering. Technological
parameters were determined for good layer quality of amorphous
material. The layer thicknesses were first evaluated from the
Rutherford backscattering and spectroscopic ellipsometry measurements,
then measured directly by step-profiler, and compared to each other.
The inherence of technological parameters and composition of the layers
is discussed.

Who's online

There are currently 0 users and 163 guests online.