Formation of Ge nanocrystals in SiO2 by electron beam evaporation

Ge nanocrystals were formed by electron beam evaporation on SiO2covered Si substrates. The size and distribution of the nanocrystals
were studied by atomic force microscopy, scanning electron microscopy
and cross-sectional transmission electron microscopy. Dependencies of
the nanocrystal size, of the nanocrystal surface coverage, and sheet
resistance obtained by van der Pauw method of the Ge layer have been
found on the evaporation time. The suggested growth mechanism for the
formation of nanocrystals is the Volmer-Weber type. The sheet
resistance exhibited a power dependence on the nanocrystal size.