Publications

P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8, issue 2, ANDERSON JC, 1970, ADV PHYS, V19, P311CAMPBELL DS, 1971, REP PROG PHYS, V34, P283 CHOI WK, 2005, P 1 INT WORKSH SEM N, V1, P171 DANA A, 2006, ARXIVCONDMAT0605168 DUGUAY S, 2005, J APPL PHYS 1, V97, ARTN 104330 EAGLESHAM DJ, 1943, PHYS REV LETT, V64, P1990, pp. 818 - 822, 2008. Abstract

P, B., M. G, K. AA, D. L, Á. Nemcsics, Z. J. Horváth, G. PM, M. VP, B. SV, F. VM, et al., "FORMATION OF Ge NANOCRYSTALS BY ELECTRON BEAM EVAPORATION", NANOMEETING 2007 International Conference, pp. 431 - 434, 2007.

P, B., M. G, D. L, P. B, T. L, T. AL, K. AA, D. L, Á. Nemcsics, and Z. J. Horváth, "Formation of Ge nanocrystals in SiO2 by electron beam evaporation", International Workshop on Nanostructured Materials (ANAOMAT 2006), pp. 818 - 822, 2006.

Horváth, Z. J., D. L, V. T. V, P. B, Á. Nemcsics, F. P, G. E, M. R, and F. S, "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures", MBE-GPT 99, pp. 89 - 92, 1999.