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Publications

Found 12 results

Szűrők: Szerző = I Gyúró  [Minden szűrő visszaállítása]
1991
Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Influence of the technological circumstances on the homogenity of n-GaAs epitaxial structures", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 249 - 257, 1991.
Mészáros, I., I. Gyúró, Á. Nemcsics, B. Kovács, and K. Somogyi, "Some homogenity investigations at low temperature epitaxial growth of GaAs", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 267 - 274, 1991.
Somogyi, K., S. Varga, I. Gyúró, and Á. Nemcsics, "Some remarks on the studies of the homogeneous growth of GaAs VPE layers", CRYSTAL PROPERTIES AND PREPARATION, vol. 32-34, pp. 459 - 464, 1991.
1990
Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Some Remarks on the Studies of the Homogeneous Growth of GaAs VPE layers", 1st interntional conference on epitaxial crystal growth, pp. 355 - , 1990.
1989
Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Influence the Technological Circumstances on Homogenity of n-GaAs Epitaxial Structures", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 89 - , 1989.
Pődör, B., L. Andor, Á. Nemcsics, K. Somogyi, and I. Gyúró, "Low temperature photoluminescence characterization of acceptors in vapour phase epitaxial GaAs", CRYSTAL PROPERTIES AND PREPARATION, vol. 19-20, pp. 17 - 20, 1989.
Mészáros, I., I. Gyúró, Á. Nemcsics, B. Kovács, and K. Somogyi, "Some Homogenity Investigations at Low Temperature Epitaxial Growth of n-GaAs", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 92 - , 1989.
1986
Gyúró, I., K. Somogyi, Á. Nemcsics, and I. Mészáros, "VPE Growth of GaAs Structures for Microwave Device Purposes", Proceedings of the 8th Colloquium on Microwave Communication, Budapest, Akadémiai Kiadó, pp. 159 - , 1986.
1985
Horváth, Z. J., I. Gyúró, M. Németh-Sallay, P. Tüttő, A. Nagy, T. Németh, G. Stubnya, and Á. Nemcsics, "The Effect of Dopant Concentration on the Electrical Behaviour of GaAs-CrAu Junctions", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 143 - , 1985.
Gyúró, I., K. Somogyi, and Á. Nemcsics, "Homogenity Investigation in the GaAs VPE System", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 140 - , 1985.
Gyúró, I., T. Görög, K. Somogyi, and Á. Nemcsics, "Vapour Phase Epitaxial Growth of GaAs Structures", Symposium on electronics technology, pp. 137 - 144, 1985.
1984
Horváth, Z. J., I. Gyúró, Á. Nemcsics, and K. Kazi, "GaAs Schottky Tuning Varactors", Conference on Physics and Technology of GaAs and other III-V Semiconductors, Berlin, Akademie der Wissenschaften der DDR, pp. 13 - , 1984.