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Publications

Found 15 results

Filters: Author is K Somogyi  [Clear All Filters]
1994
Varga, S., K. Somogyi, Á. Nemcsics, and G. Gombos, "Close-spaced vapour transport growth of III-V-s", ACTA PHYSICA HUNGARICA, vol. 74, pp. 235 - 242, 1994.
1993
Varga, S., Á. Nemcsics, K. Somogyi, and G. Gombos, "CSVT Growth of III-V", Workshop on "Heterostructure epitaxy and devices", pp. & - , 1993.
1991
Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Influence of the technological circumstances on the homogenity of n-GaAs epitaxial structures", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 249 - 257, 1991.
Somogyi, K., S. Varga, and Á. Nemcsics, "Layer thickness limitation in GaAs cloride VPE system", CRYSTAL PROPERTIES AND PREPARATION, vol. 36-38, pp. 525 - 529, 1991.
Nemcsics, Á., and K. Somogyi, "Photo-electrochemical development of Dislocations in n-GaAs", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 259 - 265, 1991.
Mészáros, I., I. Gyúró, Á. Nemcsics, B. Kovács, and K. Somogyi, "Some homogenity investigations at low temperature epitaxial growth of GaAs", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 267 - 274, 1991.
Somogyi, K., S. Varga, I. Gyúró, and Á. Nemcsics, "Some remarks on the studies of the homogeneous growth of GaAs VPE layers", CRYSTAL PROPERTIES AND PREPARATION, vol. 32-34, pp. 459 - 464, 1991.
1990
Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Some Remarks on the Studies of the Homogeneous Growth of GaAs VPE layers", 1st interntional conference on epitaxial crystal growth, pp. 355 - , 1990.
1989
Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Influence the Technological Circumstances on Homogenity of n-GaAs Epitaxial Structures", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 89 - , 1989.
Pődör, B., L. Andor, Á. Nemcsics, K. Somogyi, and I. Gyúró, "Low temperature photoluminescence characterization of acceptors in vapour phase epitaxial GaAs", CRYSTAL PROPERTIES AND PREPARATION, vol. 19-20, pp. 17 - 20, 1989.
Nemcsics, Á., and K. Somogyi, "Photo-electrochemical Development of Dislocations in n-GaAs", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 91 - , 1989.
Mészáros, I., I. Gyúró, Á. Nemcsics, B. Kovács, and K. Somogyi, "Some Homogenity Investigations at Low Temperature Epitaxial Growth of n-GaAs", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 92 - , 1989.
1986
Gyúró, I., K. Somogyi, Á. Nemcsics, and I. Mészáros, "VPE Growth of GaAs Structures for Microwave Device Purposes", Proceedings of the 8th Colloquium on Microwave Communication, Budapest, Akadémiai Kiadó, pp. 159 - , 1986.
1985
Gyúró, I., K. Somogyi, and Á. Nemcsics, "Homogenity Investigation in the GaAs VPE System", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 140 - , 1985.
Gyúró, I., T. Görög, K. Somogyi, and Á. Nemcsics, "Vapour Phase Epitaxial Growth of GaAs Structures", Symposium on electronics technology, pp. 137 - 144, 1985.