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Found 6 results

Filters: Author is Pődör, Bálint  [Clear All Filters]
2011
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 19th Int. Symp. “Nanostructures: Physics and Technology”, Ekaterinburg, Russia, pp. 207-208, 06/2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 18th Int. Symp. Nanostructures: Physics and Technology, Ekaterinburg, Russia, 2011.
2009
Pődör, B., Z. J. Horváth, and V. Rakovics, "Electrical and optical properties of InGaAsSb/GaSb", 32nd Int. Spring Seminar Electron. Technol., vol. 32, Brno, Czech Republic, 2009.
2008
Horváth, Z. J., V. Rakovics, and B. Pődör, "Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions", 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, Slovakia, pp. 119-122, 2008.
2000
Horváth, Z. J., L. Dózsa, V. V. Tuyen, B. Põdör, Á. Nemcsics, P. Frigeri, E. Gombia, R. Mosca, and S. Franchi, "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures", THIN SOLID FILMS, vol. 367, pp. 89 - 92, 2000.
1989
Pődör, B., L. Andor, Á. Nemcsics, K. Somogyi, and I. Gyúró, "Low temperature photoluminescence characterization of acceptors in vapour phase epitaxial GaAs", CRYSTAL PROPERTIES AND PREPARATION, vol. 19-20, pp. 17 - 20, 1989.