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Found 14 results

Filters: Author is B. Pécz  [Clear All Filters]
2011
Tóth, L., P. Basa, T. Jászi, L. Dobos, B. Pécz, and Z. J. Horváth, "Development of Si nanocrystal layers embedded in Si3N4", 10th Multinational Congress on Microscopy 2011, Urbino, Italy, pp. 559-560, 09/2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 19th Int. Symp. “Nanostructures: Physics and Technology”, Ekaterinburg, Russia, pp. 207-208, 06/2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 18th Int. Symp. Nanostructures: Physics and Technology, Ekaterinburg, Russia, 2011.
2010
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", Solid State Surfaces and Interfaces SSSI 2010, 22-25 November, 2010, Smolenice, Slovakia, 11/2010.
Dobos, L., B. Pécz, L. Tóth, Z. J. Horváth, Z. E. Horváth, E. Horváth, A. Tóth, B. Beaumont, and Z. Bougrioua, "Al and Ti/Al contacts to n-GaN", Vacuum, vol. 84, pp. 228–230, 2010.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", 7th Solid State Surfaces and Interfaces SSSI 2010, Extended Abstract Book, Smolenice, Slovakia, pp. 36-38, 2010.
Horváth, Z. J., L. Dobos, B. Beaumont, Z. Bougrioua, and B. Pécz, "Electrical behaviour of lateral Al/n-GaN/Al structures", Appl. Surf. Sci., vol. 256, pp. 5614–5617, 2010.
2008
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Dobos, L., B. Pécz, L. Tóth, Z. J. Horváth, Z. E. Horváth, B. Beaumont, and Z. Bougrioua, "Structural and electrical properties of Au and Ti/Au contacts to n-type GaN", Vacuum, vol. 82, pp. 794-798, 2008.
2007
Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, and P. Szöllösi, "Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals", Physica E, vol. 38, pp. 71–75, 2007.
Basa, P., Z. J. Horváth, T. Jászi, G. Molnár, A. E. Pap, L. Dobos, L. Tóth, and B. Pécz, "Nem-illékony nanokristályos félvezető memóriák", Híradástechnika, vol. LXII., issue 10, pp. 43-46, 2007.
2006
Szöllősi, P., P. Basa, C. Dücső, B. Máté, M. Ádám, T. Lohner, P. Petrik, B. Pécz, L. Tóth, L. Dobos, et al., "Electrical and optical properties of Si-rich SiNx layers: Effect of annealing", Current Appl. Phys., vol. 6, issue 2, pp. 179-181, 2006.
Dobos, L., B. Pécz, L. Tóth, Z. J. Horváth, Z. E. Horváth, A. Tóth, E. Horváth, B. Beaumont, and Z. Bougrioua, "Metal contacts to n-GaN", Appl. Surf. Sci., vol. 253, pp. 655-661, 2006.