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Found 25 results

Filters: Author is Zs. J. Horváth  [Clear All Filters]
2011
Tóth, L., P. Basa, T. Jászi, L. Dobos, B. Pécz, and Z. J. Horváth, "Development of Si nanocrystal layers embedded in Si3N4", 10th Multinational Congress on Microscopy 2011, Urbino, Italy, pp. 559-560, 09/2011.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, and P. Turmezei, "Charging behaviour of MNOS memory devices with embedded Si nanocrystals: Experiments and computer simulation", Int. Symp. Applied Informatics and Related Areas, Székesfehérvár, Hungary, 2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 18th Int. Symp. Nanostructures: Physics and Technology, Ekaterinburg, Russia, 2011.
2010
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", Solid State Surfaces and Interfaces SSSI 2010, 22-25 November, 2010, Smolenice, Slovakia, 11/2010.
Dobos, L., B. Pécz, L. Tóth, Z. J. Horváth, Z. E. Horváth, E. Horváth, A. Tóth, B. Beaumont, and Z. Bougrioua, "Al and Ti/Al contacts to n-GaN", Vacuum, vol. 84, pp. 228–230, 2010.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", 7th Solid State Surfaces and Interfaces SSSI 2010, Extended Abstract Book, Smolenice, Slovakia, pp. 36-38, 2010.
Horváth, Z. J., L. Dobos, B. Beaumont, Z. Bougrioua, and B. Pécz, "Electrical behaviour of lateral Al/n-GaN/Al structures", Appl. Surf. Sci., vol. 256, pp. 5614–5617, 2010.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. I. Kovalev, D. L. Wainstein, T. Gerlai, and P. Turmezei, "Silicon nitride based non-volatile memory structures with embedded Si or Ge nanocrystals", Communications, Scientific Letters of the University of Zilina, vol. 12, issue 2, pp. 19-22, 2010.
2009
Pődör, B., Z. J. Horváth, and V. Rakovics, "Electrical and optical properties of InGaAsSb/GaSb", 32nd Int. Spring Seminar Electron. Technol., vol. 32, Brno, Czech Republic, 2009.
Horváth, Z. J., and P. Basa, "Nanocrystal non-volatile memory devices", Mater. Sci. Forum, vol. 609, pp. 1-9, 2009.
Horváth, Z. J., and P. Basa, "New trends in non-volatile semiconductor memories", Towards Intelligent Engineering and Information Technology, vol. 243, Berlin Heidelberg, Springer, pp. 323–333, 2009.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, and P. Turmezei, "Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals", 32nd Int. Spring Seminar Electron. Technol., vol. 32, Brno, Czech Republic, 2009.
2008
Basa, P., A. S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, and Z. J. Horváth, "Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals", Appl. Surf. Sci., vol. 254, pp. 3626-3629, 2008.
Horváth, Z. J., V. Rakovics, and B. Pődör, "Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions", 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, Slovakia, pp. 119-122, 2008.
Levichev, S., P. Basa, Z. J. Horváth, A. Chahboun, A. G. Rolo, N. P. Barradas, E. Alves, and M. J. M. Gomes, "Memory effect on CdSe nanocrystals embedded in SiO2 matrix", Solid State Commun., vol. 148, pp. 105–108, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, A. I. Kovalev, D. L. Wainstein, and L. Dózsa, "MNOS memory structures with embedded silicon nanocrystals", 16th Int. Symp. Nanostructures: Physics and Technology, Vladivostok, Russia, pp. 126-127, 2008.
Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, and P. Turmezei, "Si3N4 based non-volatile memory structures with embedded Si nanocrystals", 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, vol. 7, Smolenice, Slovakia, pp. 63-66, 2008.
Horváth, Z. J., and V. Hardy, "Simulation of memory behaviour of non-volatile structures", J. Nanosci. Nanotechnol., vol. 8, pp. 834–840, 2008.
Nemcsics, Á., E. Horváth, S. Nagy, L. M. Molnár, I. Mojzes, and Z. J. Horváth, "Some remarks to the nanowires grown on III-V substrate", 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, Slovakia, pp. 215-218, 2008.
2007
Basa, P., G. Molnár, A. A. Koós, L. Dózsa, Á. Nemcsics, Z. J. Horváth, P. M. Gorley, V. P. Makhniy, S. V. Bilichuk, V. M. Frasunyak, et al., "Formation of Ge nanocrystals by electron beam evaporation", Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of Nanostrucures, Minsk, Belarus, World Scientific, Singapore, pp. 431-434, 2007.
Horváth, Z. J., and P. Basa, "MIS structures with embedded semiconductor nanocrystals for non-volatile memory purposes", 13th Int. Conf. Applied Physics of Condensed Matter APCOM 2007, Bystrá, Slovakia, pp. 32-35, 2007.
Horváth, Z. J., P. Basa, T. Jászi, K. Nagy, A. E. Pap, T. Szabó, and P. Szöllősi, "MNOS and MNS memory structures with embedded Si nanocrystals", Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of Nanostrucures, Minsk, Belarus, World Scientific, Singapore, pp. 566-569, 2007.
2006
Basa, P., A. S. Alagoz, T. Lohner, M. Kulakci, K. Nagy, R. Turan, and Z. J. Horváth, "Electrical and ellipsometry study of sputtered SiO2 structures containing Ge nanocrystals", 5th Solid State Surfaces and Interfaces, Extended Abstract Book, Smolenice, Slovakia, pp. 17-20, 2006.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, P. Szöllősi, K. Nagy, and V. Hardy, "Electrical and memory properties of non-volatile memory structures with embedded Si nanocrystals", 6th Int. Conf. Advanced Semiconductor Devices and Microsystems ASDAM`06, vol. 6, Smolenice, Slovakia, pp. 205-208, 2006.
Basa, P., P. Szöllősi, and Z. J. Horváth, "Electrical study of annealed silicon nitride thin layers containing excess silicon", Kando Conference 2006, Budapest, 2006.