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Publications

Found 15 results

Szűrők: Szerző = A.E. Pap  [Minden szűrő visszaállítása]
2011
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 19th Int. Symp. “Nanostructures: Physics and Technology”, Ekaterinburg, Russia, pp. 207-208, 06/2011.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, and P. Turmezei, "Charging behaviour of MNOS memory devices with embedded Si nanocrystals: Experiments and computer simulation", Int. Symp. Applied Informatics and Related Areas, Székesfehérvár, Hungary, 2011.
Horváth, Z. J., P. Basa, T. Jászi, K. Z. Molnár, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, B. Pődör, et al., "Charging properties of Si3N4 based structures with embedded Si or Ge nanocrystals: Experiments and simulation", 18th Int. Symp. Nanostructures: Physics and Technology, Ekaterinburg, Russia, 2011.
2010
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", Solid State Surfaces and Interfaces SSSI 2010, 22-25 November, 2010, Smolenice, Slovakia, 11/2010.
Horváth, Z. J., P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L. Tóth, B. Pécz, and P. Turmezei, "Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals", 7th Solid State Surfaces and Interfaces SSSI 2010, Extended Abstract Book, Smolenice, Slovakia, pp. 36-38, 2010.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. I. Kovalev, D. L. Wainstein, T. Gerlai, and P. Turmezei, "Silicon nitride based non-volatile memory structures with embedded Si or Ge nanocrystals", Communications, Scientific Letters of the University of Zilina, vol. 12, issue 2, pp. 19-22, 2010.
2009
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, and P. Turmezei, "Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals", 32nd Int. Spring Seminar Electron. Technol., vol. 32, Brno, Czech Republic, 2009.
2008
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, A. I. Kovalev, D. L. Wainstein, and L. Dózsa, "MNOS memory structures with embedded silicon nanocrystals", 16th Int. Symp. Nanostructures: Physics and Technology, Vladivostok, Russia, pp. 126-127, 2008.
Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, and P. Turmezei, "Si3N4 based non-volatile memory structures with embedded Si nanocrystals", 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM 2008, vol. 7, Smolenice, Slovakia, pp. 63-66, 2008.
2007
Basa, P., Z. J. Horváth, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, and P. Szöllösi, "Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals", Physica E, vol. 38, pp. 71–75, 2007.
Horváth, Z. J., P. Basa, T. Jászi, K. Nagy, A. E. Pap, T. Szabó, and P. Szöllősi, "MNOS and MNS memory structures with embedded Si nanocrystals", Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of Nanostrucures, Minsk, Belarus, World Scientific, Singapore, pp. 566-569, 2007.
Basa, P., Z. J. Horváth, T. Jászi, G. Molnár, A. E. Pap, L. Dobos, L. Tóth, and B. Pécz, "Nem-illékony nanokristályos félvezető memóriák", Híradástechnika, vol. LXII., issue 10, pp. 43-46, 2007.
2006
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, P. Szöllősi, K. Nagy, and V. Hardy, "Electrical and memory properties of non-volatile memory structures with embedded Si nanocrystals", 6th Int. Conf. Advanced Semiconductor Devices and Microsystems ASDAM`06, vol. 6, Smolenice, Slovakia, pp. 205-208, 2006.