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Found 179 results

Filters: Author is Nemcsics, Ákos  [Clear All Filters]
1999
Nemcsics, Á., Ökologikus - környezetbarát építés, , Budapest, 162, 1999.
Nemcsics, Á., R. F, and D. L, "Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systems", THIN SOLID FILMS, vol. 343-344, pp. 520 - 523, 1999. Abstract
Nemcsics, Á., F. Riesz, J. Szabó, and S. Gurbán, "Study of the curvature and surface morphology of mismatched InGaAs/GaAs heterostructures by Makyoh (magic-mirror) topography", Proc. of International Workshop on MBE Growth Physics and Technology, pp. & - , 1999.
1998
R, K., Á. Nemcsics, H. R, R. F, and P. B, "A contribution to electrochemical C-V measurements on GaAs/GaAlAs structures", Proccedings of ASDAM'98 International Conference on Advanced Semiconductor Devices and Microsystems, pp. 215 - 218, 1998.
Horváth, Z. J., A. Subrahmanyan, P. Manivannan, N. Balasubramanian, Á. Nemcsics, J. Karányi, M. Rácz, and V. V. Tuyen, "Electrical and Photovoltaic Study of ITO/GaAs and ITO/InP Heterojunctions", Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, pp. 3711 - 3714, 1998.
Nemcsics, Á., L. Dobos, B. Kovács, and I. Mojzes, "Fractal Properties of Compound Semiconductor Surface after Selective Electrochemical Etching", Abstract Book of IVC-14, ICSS-10, NANO-5, QSA-10, pp. 82 - , 1998.
Nemcsics, Á., F. Riesz, and L. Dobos, "Investigation of Crystal Defects in Mismatched Heteroepitaxial Systems by Electrochemical profiling", Abstract Book of IVC-14, ICSS-10, NANO-5, QSA-10, pp. 95 - , 1998.
Nemcsics, Á., and D. L, "Investigation of InxGaAs1-x/GaAs heterostructures by electrochemical method", NATO ASI Series, Heterostructure Epitaxy and Devices - HEAD '97: Kluwer Academic Publishers, pp. 135 - 138, 1998.
Nemcsics, Á., "Kristályhibák vizsgálata vegyületfélvezető rétegszerkezetekben elektrokémiai módszerrel", A ma és holnap fizikája Magyarországon, Kivonatok gyűjteménye: ELFT, pp. 239 - 241, 1998.
Nemcsics, Á., D. L, K. B, and M. I, "Pattern formation on the compound semiconductor surface after selective electrochemical etching", ASDAM 98, 2nd International Conference on Advanced Semiconductor Devices and Microsystems: Smolenice Castle, pp. 39 - 42, 1998.
Nemcsics, Á., F. Riesz, and L. Dobos, "Selective Electrochemical Profiling of Threading Deffects in Mismatched InGaAs/GaAs Heteroepitaxial System", International Conference on Extended Defects in Semiconductors (EDS 98), pp. 15 - , 1998.
1997
Nemcsics, Á., and L. Dobos, "Investigation of InGaAs/GaAs Heterostructures by Electrochemical Method", Heterostructure Epitaxy and Devices - HEAD’97, Dordrecht, KLUVER ACAD. PUBL., pp. 135 - 138, 1997.
Nemcsics, Á., "Morphological Investigation on Electrochemically Etched GaAs Surface", Proceedings of the 7th joint vacuum conference of Hungary, Austria, Croatia and Slovenia, pp. 163 - 164, 1997.
1996
Nemcsics, Á., O. J, G. M, S. R, M. R, and S. M, "MBE growth of strained InxGa1-xAs on GaAs(001)", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 155, issue 2, pp. 427 - 437, 1996.
Nemcsics, Á., J. Szabó, S. Gurbán, and L. Csontos, "Mechanical Study of the Strained InxGa1-xAs/GaAs Heterostructures", Heterostructure Epitaxy and Devices: Kluwer Academic Publishers - NATO ASI SERIES, pp. & - , 1996.
Nemcsics, Á., "Wärmebilanz der Lehmwand oder Modellierung vom Wärmetransport", Proceedings of Energy and Mass Flow in the Life Cycle of Buildings, pp. 639 - 642, 1996.
1995
Nemcsics, Á., "The Architecture of Solar Cells and Solar Cells in Architecture", Proceedings of Building Physics Symposium, pp. 219 - 224, 1995.
Nemcsics, Á., and J. Szabó, "Studies on the Strained InxGa1-xAs/GaAs Heterostructures", Abstr. of HEAD`95, pp. & - , 1995.
1994
Nemcsics, Á., "Az epitaxiás GaAs rétegszerkezetek minősítése elektrolitos C-V méréssel", ELEKTRONIKAI TECHNOLÓGIA MIKROTECHNIKA, vol. 33, pp. 78 - 90, 1994.
Varga, S., K. Somogyi, Á. Nemcsics, and G. Gombos, "Close-spaced vapour transport growth of III-V-s", ACTA PHYSICA HUNGARICA, vol. 74, pp. 235 - 242, 1994.
R, S., R. K, M. A, Á. Nemcsics, M. R, and S. M, "The Electronic Structure of InGaAs(001)d(2x4) surfaces", JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, vol. 68, pp. 175 - 183, 1994.
Nemcsics, Á., Molekulasugár-epitaxiás InxGa1-xAs/GaAs rétegek növesztése és vizsgálata, , 1994.
1993
Varga, S., Á. Nemcsics, K. Somogyi, and G. Gombos, "CSVT Growth of III-V", Workshop on "Heterostructure epitaxy and devices", pp. & - , 1993.
Nemcsics, Á., R. Schnurpfeil, K. Resthöft, A. Müller, R. Manzke, and M. Skibowski, "The Electronic Structure InGaAs (001)d(2x4) Surfaces", Verhandlungen der Deutschen Physikalischen Gesellschaft 5/1993, pp. S1532 - , 1993.
Nemcsics, Á., and G. Erlaky, "Integrated Si-Device for Colour Measurement", Proceedings of the 7th congress of the International Colour Association Vol. B: BME, pp. 6 - 15, 1993.