Publications

Nemcsics, Á., "Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction", APPLIED SURFACE SCIENCE, vol. 190, issue 1-4, pp. 294 - 297, 2002.

KF, H. E. S. S. E., C. Z. A. N. K. M, and Á. Nemcsics, "Application of resonant backscattering spectrometry for determination of pore structure changes", ZEITSCHRIFT FÜR KRISTALLOGRAPHIE-NEW CRYSTAL STRUCTURES, vol. 216, issue 1, pp. 39 - 40, 2001.

Nemcsics, Á., D. L, and R. F, "Electrochemical defect characterization of different compound semiconductor surfaces", FIZIKA ELEKTRONIKA, vol. 112, pp. 108 - 112, 2001. Abstract

Nemcsics, Á., "The experimental band structure of In_xGa_1-xAs(001)", ACTA TECHNICA CSAV, vol. 108, issue 46, Geyer, M., Nemcsics, Á., Olde, J., Manzke, R., Skibowski, M., (1992) Verhandl. DPG(VI), 27, p. 513;Schreckenbach, A., Olde, J., Nemcsics, Á., Manzke, R., Skibowski, M., (1991) Verhandl. DPG(VI), 26, p. 1161; Nemcsics, Á., Olde, J., Geyer, M., Schnurpfeil, pp. 507 - 520, 2001. Abstract

Nemcsics, Á., and R. F, "Influence of lattice mismatch and growth rate on the decay of RHEED oscillation in the case of InGaAs/GaAs growth", CRYSTAL RESEARCH AND TECHNOLOGY, vol. 36, issue 8-10, pp. 1011 - 1018, 2001. Abstract

Nemcsics, Á., D. L, and D. L, "Investigation of non-selective material removal by electrochemical method on different III-V semiconductors", ACTA TECHNICA CSAV, vol. 108, issue 46, Blood, P., (1986) Semicond. Sci. Technol., 1, pp. 7-27;Nemcsics, Á., (1999) Phys. stat. sol. (a), 173, pp. 405-415; Ambridge, T., Faktor, M.M., (1975) J. Appl. El. Chem., 5, pp. 319-328; Seidel, H.G., Voss, R., (1991) Micro System Technologies, pp. 291-, pp. 521 - 531, 2001. Abstract

Nemcsics, Á., A napelem és fejlesztési perspektívái, , Budapest, 139, 2001.

Nemcsics, Á., "A napelemek spektrálérzékenysége", Proc. of XXVIIIth Colouristic Symposium, pp. 71 - 77, 2001.

Nemcsics, Á., "Relationship between the critical layer thickness and the decay-time constant of RHEED oscillation at the InGaAs/GaAs heterostructures", E-MRS 2001 Spring Meeting, pp. & - , 2001.

Turmezei, P., and Á. Nemcsics, "Solar Cell Structures Suitable for Military Application", HADTUDOMÁNYI TÁJÉKOZTATÓ, vol. 10, issue 7, pp. 132 - 138, 2001.

Nemcsics, Á., "Takarékos családi ház homlokzatának színterve", MAGYAR ÉPÍTŐIPAR, vol. 51, issue 11-12, pp. 352 - , 2001.

Nemcsics, Á., and K. Somogyi, "Correlation between Diffusion Length and Hall Mobility in Different GaAs Epitaxial Layers", Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems ASDAM 2000, pp. 265 - 268, 2000.

Nemcsics, Á., "Correlation between the critical layer thickness and the decay time constant of RHEED oscillations in strained InxGa1-xAs/GaAs structures", THIN SOLID FILMS, vol. 367, pp. 302 - 305, 2000.

Nemcsics, Á., and R. F, "Effect of lattice mismatch on the decay of RHEED oscillations during growth of strained InGaAs/GaAs heterostructures", Spring Meeting of the MRS, Pittsburgh, pp. 225 - 230, 2000.

Nemcsics, Á., "Experimental determination of the valence band structure of the InxGa1-xAs (001) surface", INORGANIC MATERIALS, vol. 36, issue 10, pp. 979 - 990, 2000.

Horváth, Z. J., L. Dózsa, V. V. Tuyen, B. Põdör, Á. Nemcsics, P. Frigeri, E. Gombia, R. Mosca, and S. Franchi, "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures", THIN SOLID FILMS, vol. 367, pp. 89 - 92, 2000.

Nemcsics, Á., "Growth control of the strained InGaAs/GaAs heterostructures for device purposes by decay of RHEED oscillation", Proceedings of SPIE - The International Society for Optical Engineering: Society of Photo-Optical Instrumentation Engineers, pp. - , 2000.

Nemcsics, Á., "The initial phase shift phenomenon of RHEED oscillations", JOURNAL OF CRYSTAL GROWTH, vol. 217, issue 3, pp. 223 - 227, 2000.

Nemcsics, Á., S. K. Kovach, and S. F. Motpria, "Photoelectrochemical and Photolumiminescence Investigation on the Cd4GeSe6 Monocrystal", Abstr. of Xth Int. Sci. and Techn. Conf. on Complex Oxides, Chalcogenides and Halides for Functional Electronics, pp. 118 - , 2000.

M, S., Á. Nemcsics, B. J, Z. Z, K. N, and Z. J. Horváth, "Sputtered a- SiGe:H layers for solar cell purposes", SSSI-II Book of extended abstracts, pp. 65 - , 2000.

Nemcsics, Á., D. L, and D. L, "Study of polish material removal by electrochemical method on different compound semiconductors", INORGANIC MATERIALS, vol. 36, issue 10, 1988, BIORAD PN4200 7ANUALAKITA K, 1991, J ELECTROCHEM SOC, V138, P2095 AMBRIDGE T, 1974, ELECTRON LETT, V15, P674 AMBRIDGE T, 1975, J APPL ELECTROCHEM, V5, P319 BLOOD P, 1985, SEMICOND SCI TECH, V1, P7 CHEN LC, 1996, GENET ENG NEWS, V16, P38 FAKTOR MM, 1, pp. 969 - 974, 2000. Abstract

R, K., Á. Nemcsics, H. R, R. F, and P. B, "Carrier Profiling of a Heterojunction Bipolar Transistor And P-i-n Photodiode Structures by Electrochemical C-v Technique", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 175, issue 2, pp. 631 - 636, 1999. Abstract

Nemcsics, Á., "Contribution to the impedance analysis of GaAs-electrolyte junctions", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 173, pp. 405 - 409, 1999.

Horváth, Z. J., D. L, V. T. V, P. B, Á. Nemcsics, F. P, G. E, M. R, and F. S, "Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures", MBE-GPT 99, pp. 89 - 92, 1999.

Nemcsics, Á., A napelem működése, fajtái és alkalmazása, , Budapest, 134 p., 1999.