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1992

Geyer, M., Á. Nemcsics, J. Olde, K. Resthöft, R. Manzke, and M. Skibowski, "Computergesteuerte Optimierung der Molekularstrahlepitaxie mittels RHEED- Oszillationen", Verhandlungen der Deutschen Physikalischen Gesellschaft, pp. S531 - , 1992.

1991

K, S. O. M. O. G. Y. I., N. E. M. E. T. H. S. A. L. L. A. Y. M, and Á. Nemcsics, "DETERMINATION OF THE THICKNESS OF CHEMICALLY REMOVED THIN-LAYERS ON GAAS VPE STRUCTURES", CRYSTAL RESEARCH AND TECHNOLOGY, vol. 26, issue 8, pp. 1091 - 1097, 1991.

Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Influence of the technological circumstances on the homogenity of n-GaAs epitaxial structures", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 249 - 257, 1991.

Somogyi, K., S. Varga, and Á. Nemcsics, "Layer thickness limitation in GaAs cloride VPE system", CRYSTAL PROPERTIES AND PREPARATION, vol. 36-38, pp. 525 - 529, 1991.

Nemcsics, Á., and K. Somogyi, "Photo-electrochemical development of Dislocations in n-GaAs", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 259 - 265, 1991.

Schreckenbach, A., J. Olde, Á. Nemcsics, R. Manzke, and M. Skibowski, "Präparation und elektronische Struktur von InAs (001)-Oberflächen", Verhandlungen der Deutschen Physikalischen Gesellschaft, pp. S1161 - , 1991.

Mészáros, I., I. Gyúró, Á. Nemcsics, B. Kovács, and K. Somogyi, "Some homogenity investigations at low temperature epitaxial growth of GaAs", ACTA PHYSICA HUNGARICA, vol. 70, issue 3, pp. 267 - 274, 1991.

Somogyi, K., S. Varga, I. Gyúró, and Á. Nemcsics, "Some remarks on the studies of the homogeneous growth of GaAs VPE layers", CRYSTAL PROPERTIES AND PREPARATION, vol. 32-34, pp. 459 - 464, 1991.

1990

Nemcsics, Á., GaAs/elektrolit átmenet vizsgálata C-V mérés szempontjából, , 1990.

Nemcsics, Á., P. E. T. R. A. S. L, and S. O. M. O. G. Y. I. K, "OBSERVATION OF DISLOCATIONS IN GAAS BY (PHOTO)-ELECTROCHEMICAL METHOD", VACUUM, vol. 41, issue 4-6, pp. 1012 - 1015, 1990.

Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Some Remarks on the Studies of the Homogeneous Growth of GaAs VPE layers", 1st interntional conference on epitaxial crystal growth, pp. 355 - , 1990.

1989

Somogyi, K., I. Gyúró, Á. Nemcsics, and S. Varga, "Influence the Technological Circumstances on Homogenity of n-GaAs Epitaxial Structures", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 89 - , 1989.

Pődör, B., L. Andor, Á. Nemcsics, K. Somogyi, and I. Gyúró, "Low temperature photoluminescence characterization of acceptors in vapour phase epitaxial GaAs", CRYSTAL PROPERTIES AND PREPARATION, vol. 19-20, pp. 17 - 20, 1989.

Nemcsics, Á., and K. Somogyi, "Photo-electrochemical Development of Dislocations in n-GaAs", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 91 - , 1989.

Mészáros, I., I. Gyúró, Á. Nemcsics, B. Kovács, and K. Somogyi, "Some Homogenity Investigations at Low Temperature Epitaxial Growth of n-GaAs", 5th Hungarian Conference on Crystal Growth; 2nd International Symposium on Shaped Crystal Growth, pp. 92 - , 1989.

1988

Betko, J., K. Merinsky, Á. Nemcsics, and P. Sviszt, "Determination of Electrical Parameters of Semiinsulating GaAs using Galvanomagnetic Measurements", Biennal Report 1987-88 Electro-Physical Research Centre Slovak Academy of Sciences, pp. 24 - 26, 1988.

Kovács, B., I. Mészáros, K. Somogyi, Á. Nemcsics, and C. Sass, "Material Characterization for GaAs MESFET purposes", 3rd Conference on Physics and Technology of GaAs and other III-V Semiconductors, pp. 47 - , 1988.

Nemcsics, Á., "Novel Subject on the College: Technical Ecology for Electrical Engineers", XV. Tudományos ülésszak, pp. 73 - 77, 1988.

Nemcsics, Á., "Trends of Development of Solar Cells", XV. Tudományos ülésszak, pp. 8-12 - , 1988.

1987

I, G., S. O. M. O. G. Y. I. K, Á. Nemcsics, and M. I, "Mikrohullámú célra történő gőzfázisú GaAs epitaxiás növesztés az MTA MFKI-ban", HÍRADÁSTECHNIKA, vol. 38, issue 12, pp. 557 - , 1987.

Betko, J., K. Merinsky, Á. Nemcsics, and P. Sviszt, "On the Electrical Properties of Semiinsulating GaAs", CRYSTAL PROPERTIES AND PREPARATION, vol. 12, pp. 143 - 146, 1987.

1986

I, G., S. O. M. O. G. Y. I. K, and Á. Nemcsics, "GaAs gőzfázisú epitaxiális réteg növesztése és a homogenitást befolyásoló tényezők", FINOMMECHANIKA MIKROTECHNIKA, vol. 25, pp. 36 - 39, 1986.

Gyúró, I., K. Somogyi, Á. Nemcsics, and I. Mészáros, "VPE Growth of GaAs Structures for Microwave Device Purposes", Proceedings of the 8th Colloquium on Microwave Communication, Budapest, Akadémiai Kiadó, pp. 159 - , 1986.

1985

Horváth, Z. J., G. I, N. - S. M, T. P, N. A, D. L, K. B, Pál E. K, S. B, F. Á, et al., "The effect of dopant concentration on the electrical behaviour of GaAs-CrAu junctions", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 747 - 753, 1985.

Horváth, Z. J., I. Gyúró, M. Németh-Sallay, P. Tüttő, A. Nagy, T. Németh, G. Stubnya, and Á. Nemcsics, "The Effect of Dopant Concentration on the Electrical Behaviour of GaAs-CrAu Junctions", The seventh Czechoslovak Conference on Electronics and Vacuum Physics, Oxford, Pergamon Press, pp. 143 - , 1985.