Skip to main content

Publications

Found 6 results

Filters: Author is P. Szöllősi  [Clear All Filters]
2008
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, and K. Nagy, "Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals", J. Nanosci. Nanotechnol., vol. 8, pp. 812–817, 2008.
2007
Horváth, Z. J., P. Basa, T. Jászi, K. Nagy, A. E. Pap, T. Szabó, and P. Szöllősi, "MNOS and MNS memory structures with embedded Si nanocrystals", Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of Nanostrucures, Minsk, Belarus, World Scientific, Singapore, pp. 566-569, 2007.
2006
Horváth, Z. J., P. Basa, T. Jászi, A. E. Pap, P. Szöllősi, K. Nagy, and V. Hardy, "Electrical and memory properties of non-volatile memory structures with embedded Si nanocrystals", 6th Int. Conf. Advanced Semiconductor Devices and Microsystems ASDAM`06, vol. 6, Smolenice, Slovakia, pp. 205-208, 2006.
Szöllősi, P., P. Basa, C. Dücső, B. Máté, M. Ádám, T. Lohner, P. Petrik, B. Pécz, L. Tóth, L. Dobos, et al., "Electrical and optical properties of Si-rich SiNx layers: Effect of annealing", Current Appl. Phys., vol. 6, issue 2, pp. 179-181, 2006.
Basa, P., P. Szöllősi, and Z. J. Horváth, "Electrical study of annealed silicon nitride thin layers containing excess silicon", Kando Conference 2006, Budapest, 2006.